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PSMN1R4-30YLDX

PSMN1R4-30YLDX

For Reference Only

Part Number PSMN1R4-30YLDX
PNEDA Part # PSMN1R4-30YLDX
Description MOSFET N-CH 30V 100A LFPAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 22,116
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN1R4-30YLDX Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN1R4-30YLDX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN1R4-30YLDX, PSMN1R4-30YLDX Datasheet (Total Pages: 13, Size: 722 KB)
PDFPSMN1R4-30YLDX Datasheet Cover
PSMN1R4-30YLDX Datasheet Page 2 PSMN1R4-30YLDX Datasheet Page 3 PSMN1R4-30YLDX Datasheet Page 4 PSMN1R4-30YLDX Datasheet Page 5 PSMN1R4-30YLDX Datasheet Page 6 PSMN1R4-30YLDX Datasheet Page 7 PSMN1R4-30YLDX Datasheet Page 8 PSMN1R4-30YLDX Datasheet Page 9 PSMN1R4-30YLDX Datasheet Page 10 PSMN1R4-30YLDX Datasheet Page 11

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PSMN1R4-30YLDX Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.42mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs54.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3840pF @ 15V
FET Feature-
Power Dissipation (Max)166W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

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Manufacturer

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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FET Type

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30V

Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

3980pF @ 12V

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30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

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Operating Temperature

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Manufacturer

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.2mOhm @ 13.2A, 10V

Vgs(th) (Max) @ Id

4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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Mounting Type

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