Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PSMN0R9-30YLDX

PSMN0R9-30YLDX

For Reference Only

Part Number PSMN0R9-30YLDX
PNEDA Part # PSMN0R9-30YLDX
Description MOSFET N-CH 30V 300A 56LFPAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 94,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN0R9-30YLDX Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN0R9-30YLDX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN0R9-30YLDX, PSMN0R9-30YLDX Datasheet (Total Pages: 13, Size: 717.2 KB)
PDFPSMN0R9-30YLDX Datasheet Cover
PSMN0R9-30YLDX Datasheet Page 2 PSMN0R9-30YLDX Datasheet Page 3 PSMN0R9-30YLDX Datasheet Page 4 PSMN0R9-30YLDX Datasheet Page 5 PSMN0R9-30YLDX Datasheet Page 6 PSMN0R9-30YLDX Datasheet Page 7 PSMN0R9-30YLDX Datasheet Page 8 PSMN0R9-30YLDX Datasheet Page 9 PSMN0R9-30YLDX Datasheet Page 10 PSMN0R9-30YLDX Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PSMN0R9-30YLDX Datasheet
  • where to find PSMN0R9-30YLDX
  • Nexperia

  • Nexperia PSMN0R9-30YLDX
  • PSMN0R9-30YLDX PDF Datasheet
  • PSMN0R9-30YLDX Stock

  • PSMN0R9-30YLDX Pinout
  • Datasheet PSMN0R9-30YLDX
  • PSMN0R9-30YLDX Supplier

  • Nexperia Distributor
  • PSMN0R9-30YLDX Price
  • PSMN0R9-30YLDX Distributor

PSMN0R9-30YLDX Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C300A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs109nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7668pF @ 15V
FET Feature-
Power Dissipation (Max)291W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSOT-1023, 4-LFPAK

The Products You May Be Interested In

SIR878DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 44.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPD60R2K0C6BTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 100V

FET Feature

-

Power Dissipation (Max)

22.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

BUK762R0-40C,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

175nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11323pF @ 25V

FET Feature

-

Power Dissipation (Max)

333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMN2500UFB4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

810mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

400mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.74nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

60.67pF @ 16V

FET Feature

-

Power Dissipation (Max)

460mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN

NTD40N03RT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

7.8A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.78nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

584pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

MT41J512M8RH-093:E

MT41J512M8RH-093:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

P6KE16A

P6KE16A

Taiwan Semiconductor Corporation

TVS DIODE 13.6V 22.5V DO15

AD620ARZ

AD620ARZ

Analog Devices

IC INST AMP 1 CIRCUIT 8SOIC

B160B-13-F

B160B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMB

TLP290(GR-TP,SE

TLP290(GR-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

TCS-DL004-500-WH

TCS-DL004-500-WH

Bourns

SUPPRESSOR TCS DUAL 40V 500MA

DTC114EETL

DTC114EETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

USB2517-JZX-TR

USB2517-JZX-TR

Microchip Technology

IC USB 2.0 7PORT HUB CTLR 64QFN

ADG1606BCPZ-REEL7

ADG1606BCPZ-REEL7

Analog Devices

IC MULTIPLEXER 1X16 32LFCSP

SI8901D-A01-GS

SI8901D-A01-GS

Silicon Labs

IC ADC 10BIT SAR 16SOIC

MC7815CTG

MC7815CTG

ON Semiconductor

IC REG LINEAR 15V 1A TO220AB