Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PSMN028-100YS,115

PSMN028-100YS,115

For Reference Only

Part Number PSMN028-100YS,115
PNEDA Part # PSMN028-100YS-115
Description MOSFET N-CH 100V 42A LFPAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 263,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN028-100YS Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN028-100YS,115
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN028-100YS, PSMN028-100YS Datasheet (Total Pages: 15, Size: 812.13 KB)
PDFPSMN028-100YS Datasheet Cover
PSMN028-100YS Datasheet Page 2 PSMN028-100YS Datasheet Page 3 PSMN028-100YS Datasheet Page 4 PSMN028-100YS Datasheet Page 5 PSMN028-100YS Datasheet Page 6 PSMN028-100YS Datasheet Page 7 PSMN028-100YS Datasheet Page 8 PSMN028-100YS Datasheet Page 9 PSMN028-100YS Datasheet Page 10 PSMN028-100YS Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PSMN028-100YS,115 Datasheet
  • where to find PSMN028-100YS,115
  • Nexperia

  • Nexperia PSMN028-100YS,115
  • PSMN028-100YS,115 PDF Datasheet
  • PSMN028-100YS,115 Stock

  • PSMN028-100YS,115 Pinout
  • Datasheet PSMN028-100YS,115
  • PSMN028-100YS,115 Supplier

  • Nexperia Distributor
  • PSMN028-100YS,115 Price
  • PSMN028-100YS,115 Distributor

PSMN028-100YS Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs27.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1634pF @ 50V
FET Feature-
Power Dissipation (Max)89W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

The Products You May Be Interested In

SIR484DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 17.2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 29.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

CSD19506KTTT

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

200A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

156nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 40V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DDPAK/TO-263-3

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

IXTH13N80

IXYS

Manufacturer

IXYS

Series

MegaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

IRLB8314PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 68A, 10V

Vgs(th) (Max) @ Id

2.2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5050pF @ 15V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

SUP85N15-21-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

21mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4750pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

4610X-101-332LF

4610X-101-332LF

Bourns

RES ARRAY 9 RES 3.3K OHM 10SIP

CAY10-330J4LF

CAY10-330J4LF

Bourns

RES ARRAY 4 RES 33 OHM 0804

74477810

74477810

Wurth Electronics

SMT SHIELDED POWER INDUCTOR SIZE

SRP5030T-4R7M

SRP5030T-4R7M

Bourns

FIXED IND 4.7UH 4.6A 53 MOHM SMD

SRN8040-R50Y

SRN8040-R50Y

Bourns

FIXED IND 500NH 10A 7 MOHM SMD

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM

ILBB0805ER110V

ILBB0805ER110V

Vishay Dale

FERRITE BEAD 11 OHM 0805 1LN

DLW5BSN191SQ2L

DLW5BSN191SQ2L

Murata

CMC 5A 2LN 190 OHM SMD

ECLAMP2410P.TCT

ECLAMP2410P.TCT

Semtech

FILTER RC(PI) 45 OHM/12PF SMD

DMF3Z5R5H474M3DTA0

DMF3Z5R5H474M3DTA0

Murata

CAP SUPER 470MF 5.5V 3-SMD

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312