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PHU108NQ03LT,127

PHU108NQ03LT,127

For Reference Only

Part Number PHU108NQ03LT,127
PNEDA Part # PHU108NQ03LT-127
Description MOSFET N-CH 25V 75A SOT533
Manufacturer NXP
Unit Price Request a Quote
In Stock 6,570
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHU108NQ03LT Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHU108NQ03LT,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHU108NQ03LT, PHU108NQ03LT Datasheet (Total Pages: 14, Size: 101.65 KB)
PDFPHD108NQ03LT Datasheet Cover
PHD108NQ03LT Datasheet Page 2 PHD108NQ03LT Datasheet Page 3 PHD108NQ03LT Datasheet Page 4 PHD108NQ03LT Datasheet Page 5 PHD108NQ03LT Datasheet Page 6 PHD108NQ03LT Datasheet Page 7 PHD108NQ03LT Datasheet Page 8 PHD108NQ03LT Datasheet Page 9 PHD108NQ03LT Datasheet Page 10 PHD108NQ03LT Datasheet Page 11

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PHU108NQ03LT Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16.3nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1375pF @ 12V
FET Feature-
Power Dissipation (Max)187W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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