Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PHP101NQ03LT,127

PHP101NQ03LT,127

For Reference Only

Part Number PHP101NQ03LT,127
PNEDA Part # PHP101NQ03LT-127
Description MOSFET N-CH 30V 75A TO220AB
Manufacturer NXP
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHP101NQ03LT Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHP101NQ03LT,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHP101NQ03LT, PHP101NQ03LT Datasheet (Total Pages: 13, Size: 190.71 KB)
PDFPHP101NQ03LT Datasheet Cover
PHP101NQ03LT Datasheet Page 2 PHP101NQ03LT Datasheet Page 3 PHP101NQ03LT Datasheet Page 4 PHP101NQ03LT Datasheet Page 5 PHP101NQ03LT Datasheet Page 6 PHP101NQ03LT Datasheet Page 7 PHP101NQ03LT Datasheet Page 8 PHP101NQ03LT Datasheet Page 9 PHP101NQ03LT Datasheet Page 10 PHP101NQ03LT Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PHP101NQ03LT,127 Datasheet
  • where to find PHP101NQ03LT,127
  • NXP

  • NXP PHP101NQ03LT,127
  • PHP101NQ03LT,127 PDF Datasheet
  • PHP101NQ03LT,127 Stock

  • PHP101NQ03LT,127 Pinout
  • Datasheet PHP101NQ03LT,127
  • PHP101NQ03LT,127 Supplier

  • NXP Distributor
  • PHP101NQ03LT,127 Price
  • PHP101NQ03LT,127 Distributor

PHP101NQ03LT Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs23nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2180pF @ 25V
FET Feature-
Power Dissipation (Max)166W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

FCP22N60N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SupreMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±45V

Input Capacitance (Ciss) (Max) @ Vds

1950pF @ 100V

FET Feature

-

Power Dissipation (Max)

205W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

150°C (TJ)

Mounting Type

-

Supplier Device Package

Die

Package / Case

Die

APT56F50B2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8800pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™ [B2]

Package / Case

TO-247-3 Variant

RS1E350GNTB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4060pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

DMN31D6UT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.35nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

13.6pF @ 15V

FET Feature

-

Power Dissipation (Max)

320mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

Recently Sold

PCA9617ADPJ

PCA9617ADPJ

NXP

IC REDRIVER I2C 1CH 1MHZ 8TSSOP

742792662

742792662

Wurth Electronics

FERRITE BEAD 1 KOHM 0603 1LN

MAX3160EAP+T

MAX3160EAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

MT25QU02GCBB8E12-0SIT

MT25QU02GCBB8E12-0SIT

Micron Technology Inc.

IC FLASH 2G SPI 133MHZ 24TPBGA

PIC16LF877A-I/L

PIC16LF877A-I/L

Microchip Technology

IC MCU 8BIT 14KB FLASH 44PLCC

ZXM61P02FTA

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

250R05L0R4AV4T

250R05L0R4AV4T

Johanson Technology

CAP CER 0.4PF 25V C0G/NP0 0201

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

AD629ARZ

AD629ARZ

Analog Devices

IC OPAMP DIFF 1 CIRCUIT 8SOIC

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

EN5329QI

EN5329QI

Intel

DC DC CONVERTER 0.6-4.9V 10W

2EDN7424FXTMA1

2EDN7424FXTMA1

Infineon Technologies

IC GATE DRIVER DSO8