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PHM25NQ10T,518

PHM25NQ10T,518

For Reference Only

Part Number PHM25NQ10T,518
PNEDA Part # PHM25NQ10T-518
Description MOSFET N-CH 100V 30.7A 8HVSON
Manufacturer NXP
Unit Price Request a Quote
In Stock 6,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHM25NQ10T Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHM25NQ10T,518
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHM25NQ10T, PHM25NQ10T Datasheet (Total Pages: 13, Size: 284.22 KB)
PDFPHM25NQ10T Datasheet Cover
PHM25NQ10T Datasheet Page 2 PHM25NQ10T Datasheet Page 3 PHM25NQ10T Datasheet Page 4 PHM25NQ10T Datasheet Page 5 PHM25NQ10T Datasheet Page 6 PHM25NQ10T Datasheet Page 7 PHM25NQ10T Datasheet Page 8 PHM25NQ10T Datasheet Page 9 PHM25NQ10T Datasheet Page 10 PHM25NQ10T Datasheet Page 11

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PHM25NQ10T Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C30.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs26.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 20V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HVSON (6x5)
Package / Case8-VDFN Exposed Pad

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