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PHD34NQ10T,118

PHD34NQ10T,118

For Reference Only

Part Number PHD34NQ10T,118
PNEDA Part # PHD34NQ10T-118
Description MOSFET N-CH 100V 35A DPAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHD34NQ10T Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHD34NQ10T,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHD34NQ10T, PHD34NQ10T Datasheet (Total Pages: 13, Size: 285.25 KB)
PDFPHD34NQ10T Datasheet Cover
PHD34NQ10T Datasheet Page 2 PHD34NQ10T Datasheet Page 3 PHD34NQ10T Datasheet Page 4 PHD34NQ10T Datasheet Page 5 PHD34NQ10T Datasheet Page 6 PHD34NQ10T Datasheet Page 7 PHD34NQ10T Datasheet Page 8 PHD34NQ10T Datasheet Page 9 PHD34NQ10T Datasheet Page 10 PHD34NQ10T Datasheet Page 11

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PHD34NQ10T Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1704pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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