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PHD110NQ03LT,118

PHD110NQ03LT,118

For Reference Only

Part Number PHD110NQ03LT,118
PNEDA Part # PHD110NQ03LT-118
Description MOSFET N-CH 25V 75A DPAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHD110NQ03LT Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHD110NQ03LT,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHD110NQ03LT, PHD110NQ03LT Datasheet (Total Pages: 12, Size: 94.59 KB)
PDFPHD110NQ03LT Datasheet Cover
PHD110NQ03LT Datasheet Page 2 PHD110NQ03LT Datasheet Page 3 PHD110NQ03LT Datasheet Page 4 PHD110NQ03LT Datasheet Page 5 PHD110NQ03LT Datasheet Page 6 PHD110NQ03LT Datasheet Page 7 PHD110NQ03LT Datasheet Page 8 PHD110NQ03LT Datasheet Page 9 PHD110NQ03LT Datasheet Page 10 PHD110NQ03LT Datasheet Page 11

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PHD110NQ03LT Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs26.7nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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