PDTD113ZTVL
For Reference Only
Part Number | PDTD113ZTVL |
PNEDA Part # | PDTD113ZTVL |
Description | PDTD113ZT/SOT23/TO-236AB |
Manufacturer | Nexperia |
Unit Price | Request a Quote |
In Stock | 90,738 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PDTD113ZTVL Resources
Brand | Nexperia |
ECAD Module | |
Mfr. Part Number | PDTD113ZTVL |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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PDTD113ZTVL Specifications
Manufacturer | Nexperia USA Inc. |
Series | - |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | - |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |
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Nexperia Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 140MHz Power - Max 300mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SC-70 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |