PDTD113ZTVL
For Reference Only
| Part Number | PDTD113ZTVL |
| PNEDA Part # | PDTD113ZTVL |
| Description | PDTD113ZT/SOT23/TO-236AB |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 90,738 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PDTD113ZTVL Resources
| Brand | Nexperia |
| ECAD Module |
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| Mfr. Part Number | PDTD113ZTVL |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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PDTD113ZTVL Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB |
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Manufacturer Infineon Technologies Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 130MHz Power - Max 250mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 20V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 150MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SMT3 |
Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323 |
