Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PDTB123EQAZ

PDTB123EQAZ

For Reference Only

Part Number PDTB123EQAZ
PNEDA Part # PDTB123EQAZ
Description TRANS PREBIAS PNP 3DFN
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 2,646
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PDTB123EQAZ Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPDTB123EQAZ
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
PDTB123EQAZ, PDTB123EQAZ Datasheet (Total Pages: 23, Size: 3,670.72 KB)
PDFPDTB143EQAZ Datasheet Cover
PDTB143EQAZ Datasheet Page 2 PDTB143EQAZ Datasheet Page 3 PDTB143EQAZ Datasheet Page 4 PDTB143EQAZ Datasheet Page 5 PDTB143EQAZ Datasheet Page 6 PDTB143EQAZ Datasheet Page 7 PDTB143EQAZ Datasheet Page 8 PDTB143EQAZ Datasheet Page 9 PDTB143EQAZ Datasheet Page 10 PDTB143EQAZ Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PDTB123EQAZ Datasheet
  • where to find PDTB123EQAZ
  • Nexperia

  • Nexperia PDTB123EQAZ
  • PDTB123EQAZ PDF Datasheet
  • PDTB123EQAZ Stock

  • PDTB123EQAZ Pinout
  • Datasheet PDTB123EQAZ
  • PDTB123EQAZ Supplier

  • Nexperia Distributor
  • PDTB123EQAZ Price
  • PDTB123EQAZ Distributor

PDTB123EQAZ Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max325mW
Mounting TypeSurface Mount
Package / Case3-XDFN Exposed Pad
Supplier Device PackageDFN1010D-3

The Products You May Be Interested In

DDTA115EKA-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

100 kOhms

Resistor - Emitter Base (R2)

100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

82 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SC-59-3

DTC143EKAT146

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3

RN1402,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

S-Mini

DDTC113TLP-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

250mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

3-UFDFN

Supplier Device Package

3-DFN1006 (1.0x0.6)

RN1101CT(TPL3)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

20V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

50mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

CST3

Recently Sold

MBR0580-TP

MBR0580-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 500MA SOD123

74ACT08SC

74ACT08SC

ON Semiconductor

IC GATE AND 4CH 2-INP 14SOIC

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3

LTC1773EMS#TRPBF

LTC1773EMS#TRPBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 10MSOP

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

4608X-102-682LF

4608X-102-682LF

Bourns

RES ARRAY 4 RES 6.8K OHM 8SIP

IM03GR

IM03GR

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 5VDC

MIC2026-2YM

MIC2026-2YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP

NLC565050T-101K-PF

NLC565050T-101K-PF

TDK

FIXED IND 100UH 250MA 1.6 OHM

APT8024JLL

APT8024JLL

Microsemi

MOSFET N-CH 800V 29A SOT-227