NVMYS8D0N04CTWG
For Reference Only
| Part Number | NVMYS8D0N04CTWG |
| PNEDA Part # | NVMYS8D0N04CTWG |
| Description | FET NCH 40V 48A |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,442 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NVMYS8D0N04CTWG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NVMYS8D0N04CTWG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NVMYS8D0N04CTWG Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 38W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-LFPAK |
| Package / Case | SOT-1023, 4-LFPAK |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 41A (Ta), 237A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 170µA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 128W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-LFPAK Package / Case 8-PowerSMD, Gull Wing |
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
