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NVMYS4D1N06CLTWG

NVMYS4D1N06CLTWG

For Reference Only

Part Number NVMYS4D1N06CLTWG
PNEDA Part # NVMYS4D1N06CLTWG
Description T6 60V LL LFPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,690
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMYS4D1N06CLTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMYS4D1N06CLTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMYS4D1N06CLTWG, NVMYS4D1N06CLTWG Datasheet (Total Pages: 6, Size: 189.88 KB)
PDFNVMYS4D1N06CLTWG Datasheet Cover
NVMYS4D1N06CLTWG Datasheet Page 2 NVMYS4D1N06CLTWG Datasheet Page 3 NVMYS4D1N06CLTWG Datasheet Page 4 NVMYS4D1N06CLTWG Datasheet Page 5 NVMYS4D1N06CLTWG Datasheet Page 6

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NVMYS4D1N06CLTWG Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK4 (5x6)
Package / CaseSOT-1023, 4-LFPAK

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