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NVMFS6B85NLT1G

NVMFS6B85NLT1G

For Reference Only

Part Number NVMFS6B85NLT1G
PNEDA Part # NVMFS6B85NLT1G
Description MOSFET N-CH 100V 5.6A 19A 5DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS6B85NLT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS6B85NLT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS6B85NLT1G, NVMFS6B85NLT1G Datasheet (Total Pages: 6, Size: 80.2 KB)
PDFNVMFS6B85NLWFT1G Datasheet Cover
NVMFS6B85NLWFT1G Datasheet Page 2 NVMFS6B85NLWFT1G Datasheet Page 3 NVMFS6B85NLWFT1G Datasheet Page 4 NVMFS6B85NLWFT1G Datasheet Page 5 NVMFS6B85NLWFT1G Datasheet Page 6

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NVMFS6B85NLT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.6A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.9nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 25V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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