NVMFS6B03NWFT1G
For Reference Only
Part Number | NVMFS6B03NWFT1G |
PNEDA Part # | NVMFS6B03NWFT1G |
Description | MOSFET N-CH 100V 132A SO8FL |
Manufacturer | ON Semiconductor |
Unit Price | Request a Quote |
In Stock | 6,228 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
NVMFS6B03NWFT1G Resources
Brand | ON Semiconductor |
ECAD Module | |
Mfr. Part Number | NVMFS6B03NWFT1G |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NVMFS6B03NWFT1G Datasheet
- where to find NVMFS6B03NWFT1G
- ON Semiconductor
- ON Semiconductor NVMFS6B03NWFT1G
- NVMFS6B03NWFT1G PDF Datasheet
- NVMFS6B03NWFT1G Stock
- NVMFS6B03NWFT1G Pinout
- Datasheet NVMFS6B03NWFT1G
- NVMFS6B03NWFT1G Supplier
- ON Semiconductor Distributor
- NVMFS6B03NWFT1G Price
- NVMFS6B03NWFT1G Distributor
NVMFS6B03NWFT1G Specifications
Manufacturer | ON Semiconductor |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 3.9W (Ta), 198W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Package / Case | 8-PowerTDFN |
The Products You May Be Interested In
NXP Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 229nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 14964pF @ 25V FET Feature - Power Dissipation (Max) 306W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Microsemi Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/564 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 800mW (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 18-ULCC (9.14x7.49) Package / Case 18-CLCC |
Vishay Siliconix Manufacturer Vishay Siliconix Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
IXYS Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5230pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS220 Package / Case TO-220-3, Short Tab |