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NVMFS6B03NLWFT1G

NVMFS6B03NLWFT1G

For Reference Only

Part Number NVMFS6B03NLWFT1G
PNEDA Part # NVMFS6B03NLWFT1G
Description MOSFET N-CH 100V 20A 5DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS6B03NLWFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS6B03NLWFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS6B03NLWFT1G, NVMFS6B03NLWFT1G Datasheet (Total Pages: 6, Size: 82.45 KB)
PDFNVMFS6B03NLWFT3G Datasheet Cover
NVMFS6B03NLWFT3G Datasheet Page 2 NVMFS6B03NLWFT3G Datasheet Page 3 NVMFS6B03NLWFT3G Datasheet Page 4 NVMFS6B03NLWFT3G Datasheet Page 5 NVMFS6B03NLWFT3G Datasheet Page 6

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NVMFS6B03NLWFT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.4nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5320pF @ 25V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 198W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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