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NVMFS5C442NLAFT1G

NVMFS5C442NLAFT1G

For Reference Only

Part Number NVMFS5C442NLAFT1G
PNEDA Part # NVMFS5C442NLAFT1G
Description MOSFET N-CH 40V 29A 130A 5DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5C442NLAFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5C442NLAFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5C442NLAFT1G, NVMFS5C442NLAFT1G Datasheet (Total Pages: 7, Size: 179.78 KB)
PDFNVMFS5C442NLWFAFT3G Datasheet Cover
NVMFS5C442NLWFAFT3G Datasheet Page 2 NVMFS5C442NLWFAFT3G Datasheet Page 3 NVMFS5C442NLWFAFT3G Datasheet Page 4 NVMFS5C442NLWFAFT3G Datasheet Page 5 NVMFS5C442NLWFAFT3G Datasheet Page 6 NVMFS5C442NLWFAFT3G Datasheet Page 7

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NVMFS5C442NLAFT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C29A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 25V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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