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NVMFS5C430NLAFT1G

NVMFS5C430NLAFT1G

For Reference Only

Part Number NVMFS5C430NLAFT1G
PNEDA Part # NVMFS5C430NLAFT1G
Description MOSFET N-CH 40V 38A 200A 5DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,730
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5C430NLAFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5C430NLAFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5C430NLAFT1G, NVMFS5C430NLAFT1G Datasheet (Total Pages: 6, Size: 131.87 KB)
PDFNVMFS5C430NLWFT3G Datasheet Cover
NVMFS5C430NLWFT3G Datasheet Page 2 NVMFS5C430NLWFT3G Datasheet Page 3 NVMFS5C430NLWFT3G Datasheet Page 4 NVMFS5C430NLWFT3G Datasheet Page 5 NVMFS5C430NLWFT3G Datasheet Page 6

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NVMFS5C430NLAFT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 20V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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