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NVMFS5A160PLZWFT3G

NVMFS5A160PLZWFT3G

For Reference Only

Part Number NVMFS5A160PLZWFT3G
PNEDA Part # NVMFS5A160PLZWFT3G
Description -60V7.7MOHMSINGLE
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5A160PLZWFT3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5A160PLZWFT3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5A160PLZWFT3G, NVMFS5A160PLZWFT3G Datasheet (Total Pages: 8, Size: 283.28 KB)
PDFNVMFS5A160PLZT1G Datasheet Cover
NVMFS5A160PLZT1G Datasheet Page 2 NVMFS5A160PLZT1G Datasheet Page 3 NVMFS5A160PLZT1G Datasheet Page 4 NVMFS5A160PLZT1G Datasheet Page 5 NVMFS5A160PLZT1G Datasheet Page 6 NVMFS5A160PLZT1G Datasheet Page 7 NVMFS5A160PLZT1G Datasheet Page 8

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NVMFS5A160PLZWFT3G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7700pF @ 20V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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