NVF3055L108T3G
For Reference Only
| Part Number | NVF3055L108T3G |
| PNEDA Part # | NVF3055L108T3G |
| Description | MOSFET N-CH 60V 3A SOT223 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,848 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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NVF3055L108T3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NVF3055L108T3G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NVF3055L108T3G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
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Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 91.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3905pF @ 30V FET Feature - Power Dissipation (Max) 113.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
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