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NVD5802NT4G-TB01

NVD5802NT4G-TB01

For Reference Only

Part Number NVD5802NT4G-TB01
PNEDA Part # NVD5802NT4G-TB01
Description MOSFET N-CH 40V 101A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,948
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD5802NT4G-TB01 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD5802NT4G-TB01
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD5802NT4G-TB01, NVD5802NT4G-TB01 Datasheet (Total Pages: 7, Size: 131.05 KB)
PDFNVD5802NT4G-TB01 Datasheet Cover
NVD5802NT4G-TB01 Datasheet Page 2 NVD5802NT4G-TB01 Datasheet Page 3 NVD5802NT4G-TB01 Datasheet Page 4 NVD5802NT4G-TB01 Datasheet Page 5 NVD5802NT4G-TB01 Datasheet Page 6 NVD5802NT4G-TB01 Datasheet Page 7

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NVD5802NT4G-TB01 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5300pF @ 12V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 93.75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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