NVD5802NT4G
For Reference Only
| Part Number | NVD5802NT4G |
| PNEDA Part # | NVD5802NT4G |
| Description | MOSFET N-CH 40V 16.4A DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,578 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NVD5802NT4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NVD5802NT4G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NVD5802NT4G Datasheet
- where to find NVD5802NT4G
- ON Semiconductor
- ON Semiconductor NVD5802NT4G
- NVD5802NT4G PDF Datasheet
- NVD5802NT4G Stock
- NVD5802NT4G Pinout
- Datasheet NVD5802NT4G
- NVD5802NT4G Supplier
- ON Semiconductor Distributor
- NVD5802NT4G Price
- NVD5802NT4G Distributor
NVD5802NT4G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Ta), 101A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 93.75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 36pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SSM Package / Case SC-75, SOT-416 |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 45A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 28mOhm @ 22.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 125W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 140mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
Manufacturer STMicroelectronics Series STripFET™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
