Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVD5802NT4G

NVD5802NT4G

For Reference Only

Part Number NVD5802NT4G
PNEDA Part # NVD5802NT4G
Description MOSFET N-CH 40V 16.4A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD5802NT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD5802NT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD5802NT4G, NVD5802NT4G Datasheet (Total Pages: 7, Size: 131.05 KB)
PDFNVD5802NT4G-TB01 Datasheet Cover
NVD5802NT4G-TB01 Datasheet Page 2 NVD5802NT4G-TB01 Datasheet Page 3 NVD5802NT4G-TB01 Datasheet Page 4 NVD5802NT4G-TB01 Datasheet Page 5 NVD5802NT4G-TB01 Datasheet Page 6 NVD5802NT4G-TB01 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVD5802NT4G Datasheet
  • where to find NVD5802NT4G
  • ON Semiconductor

  • ON Semiconductor NVD5802NT4G
  • NVD5802NT4G PDF Datasheet
  • NVD5802NT4G Stock

  • NVD5802NT4G Pinout
  • Datasheet NVD5802NT4G
  • NVD5802NT4G Supplier

  • ON Semiconductor Distributor
  • NVD5802NT4G Price
  • NVD5802NT4G Distributor

NVD5802NT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5300pF @ 12V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 93.75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

NTP45N06L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

45A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

28mOhm @ 22.5A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 125W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

BUK7M9R9-60EX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2007pF @ 25V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK33

Package / Case

SOT-1210, 8-LFPAK33

IRF530NSTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 70W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDMS5672

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10.6A (Ta), 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

11.5mOhm @ 10.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (5x6), Power56

Package / Case

8-PowerWDFN

VQ1004P

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

ATMEGA162-16PU

ATMEGA162-16PU

Microchip Technology

IC MCU 8BIT 16KB FLASH 40DIP

AT89C51-24AI

AT89C51-24AI

Microchip Technology

IC MCU 8BIT 4KB FLASH 44TQFP

AD8421ARMZ-R7

AD8421ARMZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 8MSOP

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

0501010.WR

0501010.WR

Littelfuse

FUSE BOARD MOUNT 10A 32VDC 1206

VNQ600

VNQ600

STMicroelectronics

RELAY SSR 4-CH HI-SIDE 28-SOIC

0458002.DR

0458002.DR

Littelfuse

FUSE BRD MNT 2A 48VAC 75VDC 1206

AC0603FR-07100KL

AC0603FR-07100KL

Yageo

RES SMD 100K OHM 1% 1/10W 0603

SD101CW-7-F

SD101CW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD123

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23

PDB-C134

PDB-C134

Advanced Photonix

SENSOR PHOTODIODE 950NM RADIAL

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP