Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTTFS5826NLTWG

NTTFS5826NLTWG

For Reference Only

Part Number NTTFS5826NLTWG
PNEDA Part # NTTFS5826NLTWG
Description MOSFET N-CH 60V 8A 8-WDFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTTFS5826NLTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTTFS5826NLTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTTFS5826NLTWG, NTTFS5826NLTWG Datasheet (Total Pages: 7, Size: 125.62 KB)
PDFNTTFS5826NLTWG Datasheet Cover
NTTFS5826NLTWG Datasheet Page 2 NTTFS5826NLTWG Datasheet Page 3 NTTFS5826NLTWG Datasheet Page 4 NTTFS5826NLTWG Datasheet Page 5 NTTFS5826NLTWG Datasheet Page 6 NTTFS5826NLTWG Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTTFS5826NLTWG Datasheet
  • where to find NTTFS5826NLTWG
  • ON Semiconductor

  • ON Semiconductor NTTFS5826NLTWG
  • NTTFS5826NLTWG PDF Datasheet
  • NTTFS5826NLTWG Stock

  • NTTFS5826NLTWG Pinout
  • Datasheet NTTFS5826NLTWG
  • NTTFS5826NLTWG Supplier

  • ON Semiconductor Distributor
  • NTTFS5826NLTWG Price
  • NTTFS5826NLTWG Distributor

NTTFS5826NLTWG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs24mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

IRFR024NTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTD60N02RG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 58W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDI047AN08A0

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

138nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

2SK3814(0)-Z-E2-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SIHP12N50C-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

555mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1375pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

-

Package / Case

TO-220-3

Recently Sold

S25FL256SAGMFI000

S25FL256SAGMFI000

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 16SOIC

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411

M27C256B-12F1

M27C256B-12F1

STMicroelectronics

IC EPROM 256K PARALLEL 28CDIP

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

EX-14A-PN

EX-14A-PN

Panasonic Industrial Automation Sales

SENSOR REFLECTIVE 25MM PNP

GS-R424

GS-R424

STMicroelectronics

DC DC CONVERTER 24V 4A

NFM21PC105B1C3D

NFM21PC105B1C3D

Murata

CAP FEEDTHRU 1UF 20% 16V 0805

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC

TL431ACLP

TL431ACLP

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

2873000202

2873000202

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

DS2401P+T&R

DS2401P+T&R

Maxim Integrated

IC SILICON SERIAL NUMBER 6TSOC

FPF2123

FPF2123

ON Semiconductor

IC LOAD SWITCH FULL FUNC SOT23-5