NTTFS4941NTAG
For Reference Only
| Part Number | NTTFS4941NTAG |
| PNEDA Part # | NTTFS4941NTAG |
| Description | MOSFET N-CH 30V 8.3A 8WDFN |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,678 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 18 - Apr 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTTFS4941NTAG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTTFS4941NTAG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NTTFS4941NTAG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.8nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1619pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta), 25.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 10V FET Feature - Power Dissipation (Max) 47W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series PowerTrench®, SyncFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 19A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.4mOhm @ 19A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3165pF @ 15V FET Feature - Power Dissipation (Max) 2.4W (Ta), 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer Alpha & Omega Semiconductor Inc. Series SDMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 5.6A (Ta), 43A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 50V FET Feature - Power Dissipation (Max) 1.9W (Ta), 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
