NTTFS4824NTAG
For Reference Only
| Part Number | NTTFS4824NTAG |
| PNEDA Part # | NTTFS4824NTAG |
| Description | MOSFET N-CH 30V 8.3A 8WDFN |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 16,050 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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NTTFS4824NTAG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTTFS4824NTAG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NTTFS4824NTAG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 69A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 11.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2363pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta), 46.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 6526pF @ 25V FET Feature - Power Dissipation (Max) 254W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 40A, 10V Vgs(th) (Max) @ Id 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8245pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 Package / Case TO-264-3, TO-264AA |
