NTMYS3D3N06CLTWG
For Reference Only
| Part Number | NTMYS3D3N06CLTWG |
| PNEDA Part # | NTMYS3D3N06CLTWG |
| Description | MOSFET N-CH 60V 100A |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,294 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTMYS3D3N06CLTWG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTMYS3D3N06CLTWG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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NTMYS3D3N06CLTWG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 133A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK4 (5x6) |
| Package / Case | - |
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.3mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V FET Feature - Power Dissipation (Max) 2.9W (Ta), 23W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1264pF @ 30V FET Feature - Power Dissipation (Max) 65W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN3333 (3.3x3.3) Package / Case 8-VDFN Exposed Pad |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 38W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
