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NTMS10P02R2G

NTMS10P02R2G

For Reference Only

Part Number NTMS10P02R2G
PNEDA Part # NTMS10P02R2G
Description MOSFET P-CH 20V 8.8A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 25,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
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NTMS10P02R2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMS10P02R2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMS10P02R2G, NTMS10P02R2G Datasheet (Total Pages: 7, Size: 133.46 KB)
PDFNTMS10P02R2 Datasheet Cover
NTMS10P02R2 Datasheet Page 2 NTMS10P02R2 Datasheet Page 3 NTMS10P02R2 Datasheet Page 4 NTMS10P02R2 Datasheet Page 5 NTMS10P02R2 Datasheet Page 6 NTMS10P02R2 Datasheet Page 7

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NTMS10P02R2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds3640pF @ 16V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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