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NTMFS4C10NT1G-001

NTMFS4C10NT1G-001

For Reference Only

Part Number NTMFS4C10NT1G-001
PNEDA Part # NTMFS4C10NT1G-001
Description MOSFET N-CH 30V 8.2A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,582
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS4C10NT1G-001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS4C10NT1G-001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS4C10NT1G-001, NTMFS4C10NT1G-001 Datasheet (Total Pages: 7, Size: 135.28 KB)
PDFNTMFS4C10NT1G-001 Datasheet Cover
NTMFS4C10NT1G-001 Datasheet Page 2 NTMFS4C10NT1G-001 Datasheet Page 3 NTMFS4C10NT1G-001 Datasheet Page 4 NTMFS4C10NT1G-001 Datasheet Page 5 NTMFS4C10NT1G-001 Datasheet Page 6 NTMFS4C10NT1G-001 Datasheet Page 7

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NTMFS4C10NT1G-001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds987pF @ 15V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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