Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTJS3151PT1G

NTJS3151PT1G

For Reference Only

Part Number NTJS3151PT1G
PNEDA Part # NTJS3151PT1G
Description MOSFET P-CH 12V 2.7A SOT-363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 584,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTJS3151PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTJS3151PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTJS3151PT1G, NTJS3151PT1G Datasheet (Total Pages: 5, Size: 123.89 KB)
PDFNTJS3151PT2 Datasheet Cover
NTJS3151PT2 Datasheet Page 2 NTJS3151PT2 Datasheet Page 3 NTJS3151PT2 Datasheet Page 4 NTJS3151PT2 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTJS3151PT1G Datasheet
  • where to find NTJS3151PT1G
  • ON Semiconductor

  • ON Semiconductor NTJS3151PT1G
  • NTJS3151PT1G PDF Datasheet
  • NTJS3151PT1G Stock

  • NTJS3151PT1G Pinout
  • Datasheet NTJS3151PT1G
  • NTJS3151PT1G Supplier

  • ON Semiconductor Distributor
  • NTJS3151PT1G Price
  • NTJS3151PT1G Distributor

NTJS3151PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs60mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 12V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88/SC70-6/SOT-363
Package / Case6-TSSOP, SC-88, SOT-363

The Products You May Be Interested In

ZVN2106A

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 18V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IXFN48N55

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

550V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8900pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

FQU2N50BTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.3Ohm @ 800mA, 10V

Vgs(th) (Max) @ Id

3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI7356ADP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6215pF @ 15V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPP100N04S303AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9600pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

AD7997BRUZ-0

AD7997BRUZ-0

Analog Devices

IC ADC 10BIT SAR 20TSSOP

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD

S6010RTP

S6010RTP

Littelfuse

SCR SENS 600V 10A TO220

EMZA250ADA101MF80G

EMZA250ADA101MF80G

United Chemi-Con

CAP ALUM 100UF 20% 25V SMD

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23

TSH82IYDT

TSH82IYDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

MAX3232EUE+

MAX3232EUE+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

MT25QU02GCBB8E12-0SIT

MT25QU02GCBB8E12-0SIT

Micron Technology Inc.

IC FLASH 2G SPI 133MHZ 24TPBGA

ES2D

ES2D

ON Semiconductor

DIODE GEN PURP 200V 2A DO214AA

STM32F091VBT6

STM32F091VBT6

STMicroelectronics

IC MCU 32BIT 128KB FLASH 100LQFP

MPXV7002DP

MPXV7002DP

NXP

PRESSURE SENSOR DUAL PORT 8-SOP

AD629ARZ

AD629ARZ

Analog Devices

IC OPAMP DIFF 1 CIRCUIT 8SOIC