Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTHS4111PT1G

NTHS4111PT1G

For Reference Only

Part Number NTHS4111PT1G
PNEDA Part # NTHS4111PT1G
Description MOSFET P-CH 30V 3.3A CHIPFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTHS4111PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTHS4111PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTHS4111PT1G, NTHS4111PT1G Datasheet (Total Pages: 6, Size: 193.24 KB)
PDFNTHS4111PT1G Datasheet Cover
NTHS4111PT1G Datasheet Page 2 NTHS4111PT1G Datasheet Page 3 NTHS4111PT1G Datasheet Page 4 NTHS4111PT1G Datasheet Page 5 NTHS4111PT1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTHS4111PT1G Datasheet
  • where to find NTHS4111PT1G
  • ON Semiconductor

  • ON Semiconductor NTHS4111PT1G
  • NTHS4111PT1G PDF Datasheet
  • NTHS4111PT1G Stock

  • NTHS4111PT1G Pinout
  • Datasheet NTHS4111PT1G
  • NTHS4111PT1G Supplier

  • ON Semiconductor Distributor
  • NTHS4111PT1G Price
  • NTHS4111PT1G Distributor

NTHS4111PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs45mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 24V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageChipFET™
Package / Case8-SMD, Flat Lead

The Products You May Be Interested In

SI7315DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

8.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

315mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 75V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 52W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

FQA12P20

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

12.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

470mOhm @ 6.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

NTD80N02G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 20V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SSM6K341NU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

36mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

6-UDFNB (2x2)

Package / Case

6-WDFN Exposed Pad

IRLR3715ZTR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

810pF @ 10V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

M27C256B-12F1

M27C256B-12F1

STMicroelectronics

IC EPROM 256K PARALLEL 28CDIP

914CE2-3

914CE2-3

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 5A 240V

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

L6221AD

L6221AD

STMicroelectronics

TRANS 4NPN DARL 50V 1.8A 20SOIC

STPS0560Z

STPS0560Z

STMicroelectronics

DIODE SCHOTTKY 60V 500MA SOD123

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

AD7768-4BSTZ

AD7768-4BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

NB-PTCO-157

NB-PTCO-157

TE Connectivity Measurement Specialties

SENSOR RTD 1KOHM 0.001% 2SIP

LAN8710AI-EZK-TR

LAN8710AI-EZK-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 32QFN

BA30BC0WFP-E2

BA30BC0WFP-E2

Rohm Semiconductor

IC REG LINEAR 3V 1A TO252-5

IR2113STRPBF

IR2113STRPBF

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC

MC9S08LH36CLH

MC9S08LH36CLH

NXP

IC MCU 8BIT 36KB FLASH 64LQFP