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NTHL080N120SC1

NTHL080N120SC1

For Reference Only

Part Number NTHL080N120SC1
PNEDA Part # NTHL080N120SC1
Description SIC MOS TO247 80MW 1200V
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 9,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTHL080N120SC1 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTHL080N120SC1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTHL080N120SC1, NTHL080N120SC1 Datasheet (Total Pages: 7, Size: 368.58 KB)
PDFNTHL080N120SC1 Datasheet Cover
NTHL080N120SC1 Datasheet Page 2 NTHL080N120SC1 Datasheet Page 3 NTHL080N120SC1 Datasheet Page 4 NTHL080N120SC1 Datasheet Page 5 NTHL080N120SC1 Datasheet Page 6 NTHL080N120SC1 Datasheet Page 7

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NTHL080N120SC1 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs56nC @ 20V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds1670pF @ 800V
FET Feature-
Power Dissipation (Max)348W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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