Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTDV20P06LT4G

NTDV20P06LT4G

For Reference Only

Part Number NTDV20P06LT4G
PNEDA Part # NTDV20P06LT4G
Description MOSFET P-CH 60V 15.5A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,064
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTDV20P06LT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTDV20P06LT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTDV20P06LT4G, NTDV20P06LT4G Datasheet (Total Pages: 7, Size: 139.62 KB)
PDFNTDV20P06LT4G Datasheet Cover
NTDV20P06LT4G Datasheet Page 2 NTDV20P06LT4G Datasheet Page 3 NTDV20P06LT4G Datasheet Page 4 NTDV20P06LT4G Datasheet Page 5 NTDV20P06LT4G Datasheet Page 6 NTDV20P06LT4G Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTDV20P06LT4G Datasheet
  • where to find NTDV20P06LT4G
  • ON Semiconductor

  • ON Semiconductor NTDV20P06LT4G
  • NTDV20P06LT4G PDF Datasheet
  • NTDV20P06LT4G Stock

  • NTDV20P06LT4G Pinout
  • Datasheet NTDV20P06LT4G
  • NTDV20P06LT4G Supplier

  • ON Semiconductor Distributor
  • NTDV20P06LT4G Price
  • NTDV20P06LT4G Distributor

NTDV20P06LT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 25V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

RRS100N03TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

FCPF400N60

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1580pF @ 25V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

BSP88L6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 4.5V

Rds On (Max) @ Id, Vgs

6Ohm @ 350mA, 10V

Vgs(th) (Max) @ Id

1.4V @ 108µA

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

95pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

STL100N6LF6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8900pF @ 25V

FET Feature

-

Power Dissipation (Max)

4.8W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

Recently Sold

A6H-8101

A6H-8101

Omron Electronics Inc-EMC Div

SWITCH SLIDE DIP SPST 25MA 24V

NLC565050T-101K-PF

NLC565050T-101K-PF

TDK

FIXED IND 100UH 250MA 1.6 OHM

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

LAN8740AI-EN

LAN8740AI-EN

Microchip Technology

IC TRANSCEIVER FULL 1/1 32SQFN

MMSZ4699T1G

MMSZ4699T1G

ON Semiconductor

DIODE ZENER 12V 500MW SOD123

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

MIC2026-2YM

MIC2026-2YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

JANTX1N4148-1

JANTX1N4148-1

Microsemi

DIODE GEN PURP 75V 200MA DO35

STPS2H100U

STPS2H100U

STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

ISL3259EIBZ-T

ISL3259EIBZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8SOIC

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3