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NTD80N02-1G

NTD80N02-1G

For Reference Only

Part Number NTD80N02-1G
PNEDA Part # NTD80N02-1G
Description MOSFET N-CH 24V 80A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
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NTD80N02-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD80N02-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD80N02-1G, NTD80N02-1G Datasheet (Total Pages: 8, Size: 118.32 KB)
PDFNTD80N02T4G Datasheet Cover
NTD80N02T4G Datasheet Page 2 NTD80N02T4G Datasheet Page 3 NTD80N02T4G Datasheet Page 4 NTD80N02T4G Datasheet Page 5 NTD80N02T4G Datasheet Page 6 NTD80N02T4G Datasheet Page 7 NTD80N02T4G Datasheet Page 8

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NTD80N02-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 20V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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