Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD4909NA-35G

NTD4909NA-35G

For Reference Only

Part Number NTD4909NA-35G
PNEDA Part # NTD4909NA-35G
Description MOSFET N-CH 30V 41A SGL IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,434
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4909NA-35G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4909NA-35G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD4909NA-35G Datasheet
  • where to find NTD4909NA-35G
  • ON Semiconductor

  • ON Semiconductor NTD4909NA-35G
  • NTD4909NA-35G PDF Datasheet
  • NTD4909NA-35G Stock

  • NTD4909NA-35G Pinout
  • Datasheet NTD4909NA-35G
  • NTD4909NA-35G Supplier

  • ON Semiconductor Distributor
  • NTD4909NA-35G Price
  • NTD4909NA-35G Distributor

NTD4909NA-35G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17.5nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1314pF @ 15V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak

The Products You May Be Interested In

SI2303CDS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

190mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

155pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

ZVN4424ASTOA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

260mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

5.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±40V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

SI7455DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5160pF @ 40V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 83.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

STL35N75LF3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 50V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (3.3x3.3)

Package / Case

8-PowerVDFN

NTMSD2P102LR2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 16V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

MCP4921-E/SN

MCP4921-E/SN

Microchip Technology

IC DAC 12BIT V-OUT 8SOIC

B3S-1002P

B3S-1002P

Omron Electronics Inc-EMC Div

SWITCH TACTILE SPST-NO 0.05A 24V

ARF445

ARF445

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

ESDA6V1L

ESDA6V1L

STMicroelectronics

TVS DIODE 5.25V SOT23-3

MAX881REUB+

MAX881REUB+

Maxim Integrated

IC REG CHARGE PUMP 1OUT 10UMAX

TAJD107K020RNJ

TAJD107K020RNJ

CAP TANT 100UF 10% 20V 2917

MCP6566T-E/OT

MCP6566T-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5

MAX660ESA+

MAX660ESA+

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

CKR05BX104KR

CKR05BX104KR

CAP CER 0.1UF 50V BX RADIAL

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

MAX489EESD+T

MAX489EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

50ZL560MEFC12.5X25

50ZL560MEFC12.5X25

Rubycon

CAP ALUM 560UF 20% 50V RADIAL