Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD4806NA-35G

NTD4806NA-35G

For Reference Only

Part Number NTD4806NA-35G
PNEDA Part # NTD4806NA-35G
Description MOSFET N-CH 30V 11A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4806NA-35G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4806NA-35G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD4806NA-35G Datasheet
  • where to find NTD4806NA-35G
  • ON Semiconductor

  • ON Semiconductor NTD4806NA-35G
  • NTD4806NA-35G PDF Datasheet
  • NTD4806NA-35G Stock

  • NTD4806NA-35G Pinout
  • Datasheet NTD4806NA-35G
  • NTD4806NA-35G Supplier

  • ON Semiconductor Distributor
  • NTD4806NA-35G Price
  • NTD4806NA-35G Distributor

NTD4806NA-35G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2142pF @ 12V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak

The Products You May Be Interested In

STW35N60DM2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 100V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IXFH13N50

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

NTMFS4927NCT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.9A (Ta), 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

913pF @ 15V

FET Feature

-

Power Dissipation (Max)

920mW (Ta), 20.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IPD65R380E6BTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

710pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RJK6024DPH-E0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

MC908AZ60ACFUER

MC908AZ60ACFUER

NXP

IC MCU 8BIT 60KB FLASH 64QFP

CY62126EV30LL-45ZSXI

CY62126EV30LL-45ZSXI

Cypress Semiconductor

IC SRAM 1M PARALLEL 44TSOP II

SP3232EET-L

SP3232EET-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

MCP4921T-E/SN

MCP4921T-E/SN

Microchip Technology

IC DAC 12BIT V-OUT 8SOIC

HSMS-285C-TR1G

HSMS-285C-TR1G

Broadcom

RF DIODE SCHOTTKY 2V SOT323

ADF4350BCPZ-RL7

ADF4350BCPZ-RL7

Analog Devices

IC SYNTH PLL VCO FN/IN 32LFCSP

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR

AMT102-V

AMT102-V

CUI

ROTARY ENCODER INCREMENT PROGPPR

74VHC14MTCX

74VHC14MTCX

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

L7805ABD2T-TR

L7805ABD2T-TR

STMicroelectronics

IC REG LINEAR 5V 1.5A D2PAK

ADUM1401ARWZ

ADUM1401ARWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

TAJC337M006RNJ

TAJC337M006RNJ

CAP TANT 330UF 20% 6.3V 2312