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NTD32N06-1G

NTD32N06-1G

For Reference Only

Part Number NTD32N06-1G
PNEDA Part # NTD32N06-1G
Description MOSFET N-CH 60V 32A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,816
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
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NTD32N06-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD32N06-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD32N06-1G, NTD32N06-1G Datasheet (Total Pages: 8, Size: 66.76 KB)
PDFNTD32N06G Datasheet Cover
NTD32N06G Datasheet Page 2 NTD32N06G Datasheet Page 3 NTD32N06G Datasheet Page 4 NTD32N06G Datasheet Page 5 NTD32N06G Datasheet Page 6 NTD32N06G Datasheet Page 7 NTD32N06G Datasheet Page 8

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NTD32N06-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C32A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1725pF @ 25V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 93.75W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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