Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD23N03R-001

NTD23N03R-001

For Reference Only

Part Number NTD23N03R-001
PNEDA Part # NTD23N03R-001
Description MOSFET N-CH 25V 3.8A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD23N03R-001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD23N03R-001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD23N03R-001, NTD23N03R-001 Datasheet (Total Pages: 7, Size: 127.61 KB)
PDFNTD23N03RT4G Datasheet Cover
NTD23N03RT4G Datasheet Page 2 NTD23N03RT4G Datasheet Page 3 NTD23N03RT4G Datasheet Page 4 NTD23N03RT4G Datasheet Page 5 NTD23N03RT4G Datasheet Page 6 NTD23N03RT4G Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD23N03R-001 Datasheet
  • where to find NTD23N03R-001
  • ON Semiconductor

  • ON Semiconductor NTD23N03R-001
  • NTD23N03R-001 PDF Datasheet
  • NTD23N03R-001 Stock

  • NTD23N03R-001 Pinout
  • Datasheet NTD23N03R-001
  • NTD23N03R-001 Supplier

  • ON Semiconductor Distributor
  • NTD23N03R-001 Price
  • NTD23N03R-001 Distributor

NTD23N03R-001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta), 17.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.76nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 20V
FET Feature-
Power Dissipation (Max)1.14W (Ta), 22.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

AUIRF1404STRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 95A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7360pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NP180N04TUJ-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

230nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 348W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

STD1NK60T4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMN2400UFDQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

600mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

37pF @ 16V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN1212-3 (Type C)

Package / Case

3-PowerUDFN

FQB7P06TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

410mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

295pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

LTST-C150TBKT

LTST-C150TBKT

Lite-On Inc.

LED BLUE CLEAR 1206 SMD

LTC6655BHMS8-1.25#TRPBF

LTC6655BHMS8-1.25#TRPBF

Linear Technology/Analog Devices

IC VREF SERIES 1.25V 8MSOP

PTN3363BSMP

PTN3363BSMP

NXP

IC DVI/HDMI LVL SHIFTER 32HVQFN

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

DHRB34C102M2FB

DHRB34C102M2FB

Murata

CAP CER 1000PF 15KV RADIAL

MX30LF1G18AC-XKI

MX30LF1G18AC-XKI

Macronix

IC FLASH 1G PARALLEL 63VFBGA

ST3485EBDR

ST3485EBDR

STMicroelectronics

IC TRANSCEIVER HALF 1/1 8SO

LTM4613IV#PBF

LTM4613IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 12V 8A

1.5KE33A

1.5KE33A

ON Semiconductor

TVS DIODE 28.2V 45.7V AXIAL

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

MAX15006AATT/V+T

MAX15006AATT/V+T

Maxim Integrated

IC REG LINEAR 3.3V 50MA 6TDFN

XC7Z020-1CLG400C

XC7Z020-1CLG400C

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA