Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD20N03L27T4G

NTD20N03L27T4G

For Reference Only

Part Number NTD20N03L27T4G
PNEDA Part # NTD20N03L27T4G
Description MOSFET N-CH 30V 20A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD20N03L27T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD20N03L27T4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD20N03L27T4G, NTD20N03L27T4G Datasheet (Total Pages: 5, Size: 95.06 KB)
PDFNVD20N03L27T4G Datasheet Cover
NVD20N03L27T4G Datasheet Page 2 NVD20N03L27T4G Datasheet Page 3 NVD20N03L27T4G Datasheet Page 4 NVD20N03L27T4G Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD20N03L27T4G Datasheet
  • where to find NTD20N03L27T4G
  • ON Semiconductor

  • ON Semiconductor NTD20N03L27T4G
  • NTD20N03L27T4G PDF Datasheet
  • NTD20N03L27T4G Stock

  • NTD20N03L27T4G Pinout
  • Datasheet NTD20N03L27T4G
  • NTD20N03L27T4G Supplier

  • ON Semiconductor Distributor
  • NTD20N03L27T4G Price
  • NTD20N03L27T4G Distributor

NTD20N03L27T4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 25V
FET Feature-
Power Dissipation (Max)1.75W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

DKI04035

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 51A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

63.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3910pF @ 25V

FET Feature

-

Power Dissipation (Max)

61W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

8600pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPA029N06NXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

84A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.9mOhm @ 84A, 10V

Vgs(th) (Max) @ Id

3.3V @ 75µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5125pF @ 30V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

IRLMS1902TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro6™(TSOP-6)

Package / Case

SOT-23-6

TK20N60W,S1VF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1680pF @ 300V

FET Feature

-

Power Dissipation (Max)

165W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

Recently Sold

PI3740-00-LGIZ

PI3740-00-LGIZ

Vicor

DC DC CONVERTER 10-50V

8121-RC

8121-RC

Bourns

COMMON MODE CHOKE 1MH 20A 2LN TH

R5F2L3AACNFP#V0

R5F2L3AACNFP#V0

Renesas Electronics America

IC MCU 16BIT 96KB FLASH 100QFP

MPXV7002DP

MPXV7002DP

NXP

PRESSURE SENSOR DUAL PORT 8-SOP

AD7768BSTZ

AD7768BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

MT40A512M16LY-075:E

MT40A512M16LY-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

ARF445

ARF445

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

STM8AL3LE88TCY

STM8AL3LE88TCY

STMicroelectronics

IC MCU 8BIT 64KB FLASH 48LQFP

LTC4364HS-2#PBF

LTC4364HS-2#PBF

Linear Technology/Analog Devices

IC SURGE STOPPER W/DIODE SMD

S2G-13-F

S2G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB

IHLP2525CZER2R2M01

IHLP2525CZER2R2M01

Vishay Dale

FIXED IND 2.2UH 8A 20 MOHM SMD