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NTD18N06-1G

NTD18N06-1G

For Reference Only

Part Number NTD18N06-1G
PNEDA Part # NTD18N06-1G
Description MOSFET N-CH 60V 18A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD18N06-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD18N06-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD18N06-1G, NTD18N06-1G Datasheet (Total Pages: 9, Size: 162.77 KB)
PDFNTD18N06G Datasheet Cover
NTD18N06G Datasheet Page 2 NTD18N06G Datasheet Page 3 NTD18N06G Datasheet Page 4 NTD18N06G Datasheet Page 5 NTD18N06G Datasheet Page 6 NTD18N06G Datasheet Page 7 NTD18N06G Datasheet Page 8 NTD18N06G Datasheet Page 9

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NTD18N06-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 25V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 55W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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