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NTD12N10T4G

NTD12N10T4G

For Reference Only

Part Number NTD12N10T4G
PNEDA Part # NTD12N10T4G
Description MOSFET N-CH 100V 12A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD12N10T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD12N10T4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD12N10T4G, NTD12N10T4G Datasheet (Total Pages: 8, Size: 158.71 KB)
PDFNTD12N10T4G Datasheet Cover
NTD12N10T4G Datasheet Page 2 NTD12N10T4G Datasheet Page 3 NTD12N10T4G Datasheet Page 4 NTD12N10T4G Datasheet Page 5 NTD12N10T4G Datasheet Page 6 NTD12N10T4G Datasheet Page 7 NTD12N10T4G Datasheet Page 8

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NTD12N10T4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)1.28W (Ta), 56.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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