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NTB30N06G

NTB30N06G

For Reference Only

Part Number NTB30N06G
PNEDA Part # NTB30N06G
Description MOSFET N-CH 60V 27A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTB30N06G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTB30N06G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTB30N06G, NTB30N06G Datasheet (Total Pages: 7, Size: 78.2 KB)
PDFNTB30N06T4G Datasheet Cover
NTB30N06T4G Datasheet Page 2 NTB30N06T4G Datasheet Page 3 NTB30N06T4G Datasheet Page 4 NTB30N06T4G Datasheet Page 5 NTB30N06T4G Datasheet Page 6 NTB30N06T4G Datasheet Page 7

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NTB30N06G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C27A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs42mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)88.2W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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