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NSVMUN5312DW1T2G

NSVMUN5312DW1T2G

For Reference Only

Part Number NSVMUN5312DW1T2G
PNEDA Part # NSVMUN5312DW1T2G
Description TRANS NPN/PNP 50V BIPO SC88-6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 22,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVMUN5312DW1T2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVMUN5312DW1T2G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVMUN5312DW1T2G, NSVMUN5312DW1T2G Datasheet (Total Pages: 10, Size: 99.82 KB)
PDFNSBC124EPDXV6T5G Datasheet Cover
NSBC124EPDXV6T5G Datasheet Page 2 NSBC124EPDXV6T5G Datasheet Page 3 NSBC124EPDXV6T5G Datasheet Page 4 NSBC124EPDXV6T5G Datasheet Page 5 NSBC124EPDXV6T5G Datasheet Page 6 NSBC124EPDXV6T5G Datasheet Page 7 NSBC124EPDXV6T5G Datasheet Page 8 NSBC124EPDXV6T5G Datasheet Page 9 NSBC124EPDXV6T5G Datasheet Page 10

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NSVMUN5312DW1T2G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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