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NSVMUN5214DW1T3G

NSVMUN5214DW1T3G

For Reference Only

Part Number NSVMUN5214DW1T3G
PNEDA Part # NSVMUN5214DW1T3G
Description TRANS NPN 50V DUAL BIPO SC88-6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVMUN5214DW1T3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVMUN5214DW1T3G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVMUN5214DW1T3G, NSVMUN5214DW1T3G Datasheet (Total Pages: 8, Size: 84.58 KB)
PDFNSVBC114YDXV6T1G Datasheet Cover
NSVBC114YDXV6T1G Datasheet Page 2 NSVBC114YDXV6T1G Datasheet Page 3 NSVBC114YDXV6T1G Datasheet Page 4 NSVBC114YDXV6T1G Datasheet Page 5 NSVBC114YDXV6T1G Datasheet Page 6 NSVBC114YDXV6T1G Datasheet Page 7 NSVBC114YDXV6T1G Datasheet Page 8

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NSVMUN5214DW1T3G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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