NSVMUN5213DW1T3G
For Reference Only
| Part Number | NSVMUN5213DW1T3G |
| PNEDA Part # | NSVMUN5213DW1T3G |
| Description | TRANS NPN 50V DUAL BIPO SC88-6 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,070 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NSVMUN5213DW1T3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NSVMUN5213DW1T3G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NSVMUN5213DW1T3G Datasheet
- where to find NSVMUN5213DW1T3G
- ON Semiconductor
- ON Semiconductor NSVMUN5213DW1T3G
- NSVMUN5213DW1T3G PDF Datasheet
- NSVMUN5213DW1T3G Stock
- NSVMUN5213DW1T3G Pinout
- Datasheet NSVMUN5213DW1T3G
- NSVMUN5213DW1T3G Supplier
- ON Semiconductor Distributor
- NSVMUN5213DW1T3G Price
- NSVMUN5213DW1T3G Distributor
NSVMUN5213DW1T3G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
The Products You May Be Interested In
|
Manufacturer Nexperia USA Inc. Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) 1µA Frequency - Transition - Power - Max 300mW Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-666 |
Manufacturer Rohm Semiconductor Series - Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 150mW Mounting Type Surface Mount Package / Case 6-SMD (5 Leads), Flat Lead Supplier Device Package EMT5 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100µA (ICBO) Frequency - Transition 250MHz, 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Infineon Technologies Series - Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) - Frequency - Transition 200MHz Power - Max 250mW Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
