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NSVMUN5212DW1T1G

NSVMUN5212DW1T1G

For Reference Only

Part Number NSVMUN5212DW1T1G
PNEDA Part # NSVMUN5212DW1T1G
Description TRANS 2NPN PREBIAS 0.25W SOT363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 229,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVMUN5212DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVMUN5212DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVMUN5212DW1T1G, NSVMUN5212DW1T1G Datasheet (Total Pages: 8, Size: 151.99 KB)
PDFNSVBC124EDXV6T1G Datasheet Cover
NSVBC124EDXV6T1G Datasheet Page 2 NSVBC124EDXV6T1G Datasheet Page 3 NSVBC124EDXV6T1G Datasheet Page 4 NSVBC124EDXV6T1G Datasheet Page 5 NSVBC124EDXV6T1G Datasheet Page 6 NSVBC124EDXV6T1G Datasheet Page 7 NSVBC124EDXV6T1G Datasheet Page 8

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NSVMUN5212DW1T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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