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NSVMMUN2132LT1G

NSVMMUN2132LT1G

For Reference Only

Part Number NSVMMUN2132LT1G
PNEDA Part # NSVMMUN2132LT1G
Description TRANS PREBIAS PNP 246MW SOT23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVMMUN2132LT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVMMUN2132LT1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
NSVMMUN2132LT1G, NSVMMUN2132LT1G Datasheet (Total Pages: 12, Size: 102.76 KB)
PDFNSBA143EF3T5G Datasheet Cover
NSBA143EF3T5G Datasheet Page 2 NSBA143EF3T5G Datasheet Page 3 NSBA143EF3T5G Datasheet Page 4 NSBA143EF3T5G Datasheet Page 5 NSBA143EF3T5G Datasheet Page 6 NSBA143EF3T5G Datasheet Page 7 NSBA143EF3T5G Datasheet Page 8 NSBA143EF3T5G Datasheet Page 9 NSBA143EF3T5G Datasheet Page 10 NSBA143EF3T5G Datasheet Page 11

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NSVMMUN2132LT1G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max246mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

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