NSVEMT1DXV6T5G
For Reference Only
| Part Number | NSVEMT1DXV6T5G |
| PNEDA Part # | NSVEMT1DXV6T5G |
| Description | TRANS 2PNP 60V 0.1A SOT563 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,460 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NSVEMT1DXV6T5G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NSVEMT1DXV6T5G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NSVEMT1DXV6T5G Datasheet
- where to find NSVEMT1DXV6T5G
- ON Semiconductor
- ON Semiconductor NSVEMT1DXV6T5G
- NSVEMT1DXV6T5G PDF Datasheet
- NSVEMT1DXV6T5G Stock
- NSVEMT1DXV6T5G Pinout
- Datasheet NSVEMT1DXV6T5G
- NSVEMT1DXV6T5G Supplier
- ON Semiconductor Distributor
- NSVEMT1DXV6T5G Price
- NSVEMT1DXV6T5G Distributor
NSVEMT1DXV6T5G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500pA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Power - Max | 500mW |
| Frequency - Transition | 140MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
The Products You May Be Interested In
|
Manufacturer Analog Devices Inc. Series - Transistor Type 4 NPN (Quad) Matched Pairs Current - Collector (Ic) (Max) 30mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 60mV @ 100µA, 1mA Current - Collector Cutoff (Max) 3nA DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition 300MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SO |
Manufacturer Central Semiconductor Corp Series - Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/355 Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 30mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 300mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V Power - Max 350mW Frequency - Transition - Operating Temperature 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
Manufacturer STMicroelectronics Series - Transistor Type 8 NPN Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V Power - Max 2.25W Frequency - Transition - Operating Temperature -20°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 18-DIP (0.300", 7.62mm) Supplier Device Package 18-DIP |
Manufacturer Nexperia USA Inc. Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA, 2V Power - Max 510mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package 6-HUSON-EP (2x2) |
