NSVBC124EPDXV6T1G
For Reference Only
| Part Number | NSVBC124EPDXV6T1G |
| PNEDA Part # | NSVBC124EPDXV6T1G |
| Description | SS SOT563 DUAL RSTR XSTR |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,922 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NSVBC124EPDXV6T1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NSVBC124EPDXV6T1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Datasheet |
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NSVBC124EPDXV6T1G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 339W |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 300mW Mounting Type Surface Mount Package / Case SC-74A, SOT-753 Supplier Device Package SMV |
