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NSVBC124EPDXV6T1G

NSVBC124EPDXV6T1G

For Reference Only

Part Number NSVBC124EPDXV6T1G
PNEDA Part # NSVBC124EPDXV6T1G
Description SS SOT563 DUAL RSTR XSTR
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVBC124EPDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVBC124EPDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVBC124EPDXV6T1G, NSVBC124EPDXV6T1G Datasheet (Total Pages: 10, Size: 99.82 KB)
PDFNSBC124EPDXV6T5G Datasheet Cover
NSBC124EPDXV6T5G Datasheet Page 2 NSBC124EPDXV6T5G Datasheet Page 3 NSBC124EPDXV6T5G Datasheet Page 4 NSBC124EPDXV6T5G Datasheet Page 5 NSBC124EPDXV6T5G Datasheet Page 6 NSBC124EPDXV6T5G Datasheet Page 7 NSBC124EPDXV6T5G Datasheet Page 8 NSBC124EPDXV6T5G Datasheet Page 9 NSBC124EPDXV6T5G Datasheet Page 10

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NSVBC124EPDXV6T1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max339W
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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