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NSVBC114EDXV6T1G

NSVBC114EDXV6T1G

For Reference Only

Part Number NSVBC114EDXV6T1G
PNEDA Part # NSVBC114EDXV6T1G
Description TRANS 2NPN BIAS BIPOLAR SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,786
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVBC114EDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVBC114EDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVBC114EDXV6T1G, NSVBC114EDXV6T1G Datasheet (Total Pages: 8, Size: 150.83 KB)
PDFNSVBC114EDXV6T1G Datasheet Cover
NSVBC114EDXV6T1G Datasheet Page 2 NSVBC114EDXV6T1G Datasheet Page 3 NSVBC114EDXV6T1G Datasheet Page 4 NSVBC114EDXV6T1G Datasheet Page 5 NSVBC114EDXV6T1G Datasheet Page 6 NSVBC114EDXV6T1G Datasheet Page 7 NSVBC114EDXV6T1G Datasheet Page 8

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NSVBC114EDXV6T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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