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NSVB143TPDXV6T1G

NSVB143TPDXV6T1G

For Reference Only

Part Number NSVB143TPDXV6T1G
PNEDA Part # NSVB143TPDXV6T1G
Description TRANS NPN/PNP PREBIAS SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,022
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVB143TPDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVB143TPDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVB143TPDXV6T1G, NSVB143TPDXV6T1G Datasheet (Total Pages: 7, Size: 77.27 KB)
PDFNSVB143TPDXV6T1G Datasheet Cover
NSVB143TPDXV6T1G Datasheet Page 2 NSVB143TPDXV6T1G Datasheet Page 3 NSVB143TPDXV6T1G Datasheet Page 4 NSVB143TPDXV6T1G Datasheet Page 5 NSVB143TPDXV6T1G Datasheet Page 6 NSVB143TPDXV6T1G Datasheet Page 7

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NSVB143TPDXV6T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max357mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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