NSV20101JT1G
For Reference Only
| Part Number | NSV20101JT1G |
| PNEDA Part # | NSV20101JT1G |
| Description | TRANS NPN 20V 1A 89SC3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,114 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NSV20101JT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NSV20101JT1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NSV20101JT1G Datasheet
- where to find NSV20101JT1G
- ON Semiconductor
- ON Semiconductor NSV20101JT1G
- NSV20101JT1G PDF Datasheet
- NSV20101JT1G Stock
- NSV20101JT1G Pinout
- Datasheet NSV20101JT1G
- NSV20101JT1G Supplier
- ON Semiconductor Distributor
- NSV20101JT1G Price
- NSV20101JT1G Distributor
NSV20101JT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Power - Max | 255mW |
| Frequency - Transition | 350MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Supplier Device Package | SC-89-3 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 220mV @ 300mA, 3A Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V Power - Max 1.25W Frequency - Transition 270MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 3A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case E-Line-3 Supplier Device Package E-Line (TO-92 compatible) |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 2V Power - Max 25W Frequency - Transition 3MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126-3 |
Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 450mV @ 100mA, 1.5A Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V Power - Max 500mW Frequency - Transition 265MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
